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FMS7G20US60
IGBT
FMS7G20US60
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control and general inverters where short-circuit ruggedness is required.
Features
* * * * * * * Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 20A High Input Impedance Built in Brake & 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Built-in NTC Thermistor
22 23 24
Package Code : 25PM-AA
4 5 21 19 17
Application
* * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls
25
20
18 13
16 14 15
1
8 9 7
10
3
2
6 11 NTC 12
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM I2t TJ Common TSTG VISO Mounting Torque
TC = 25C unless otherwise noted
Inverter & Brake
Converter
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 80C Pulsed Collector Current Diode Continuous Forward Current @ TC = 80C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25C Short Circuit Withstand Time @ TC = 100C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive Energy pulse @ 1Cycle at 60Hz Operating Junction Temperature Storage Temperature Range Isolation Voltage Mounting part Screw @ AC 1minute @ M4
FMS7G20US60 600 20 20 40 20 40 89 10 1600 20 200 164 -40 to +150 -40 to +125 2500 2.0
Units V V A A A A W us V A A A2s C C V N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
FMS7G20US60
Electrical Characteristics of IGBT @ Inverter & Brake T
Symbol Parameter Test Conditions
C
= 25C unless otherwise noted
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V 5.0 -6.5 2.1 8.5 2.7 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1277 98 21 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C ------------10 ---65 100 80 100 0.45 0.42 70 100 110 210 0.5 0.72 -55 10 20 130 200 160 200 --140 200 220 350 ---65 15 30 ns ns ns ns mJ mJ ns ns ns ns mJ mJ us nC nC nC
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, VGE = 15V 100C
@ TC =
VCE = 300 V, IC = 20A, VGE = 15V
(c)2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
FMS7G20US60
Electrical Characteristics of DIODE @ Inverter & Brake T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 20A di / dt = 40 A/us
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 20A TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 2.0 75 110 1.3 1.8 50 100
Max. 2.8 -150 -2.6 -195 --
Units V ns A nC
Electrical Characteristics of DIODE @ Converter T
Symbol VFM IRRM Parameter Diode Forward Voltage Repetitive Reverse Current
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 20A TC = 100C VR = VRRM TC = 25C TC = 100C
Min. -----
Typ. 1.1 1.0 -5
Max. 1.5 -8 --
Units V mA
Thermal Characteristics
Inverter Brake Converter Weight Symbol RJC RJC RJC RJC RJC Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Weight of Module Parameter (IGBT Part, per 1/6 Module) (DIODE Part, per 1/6 Module) (IGBT Part) (DIODE Part) (DIODE Part, per 1/6 Module) Typ. -----60 Max. 1.4 2.3 1.4 2.3 1.5 -Units C/W C/W C/W C/W C/W g
NTC Thermistor Characteristics
Thermistor Symbol R25 R100 B(25/100) Parameter Rated Resistance @ Tc = 25C Rated Resistance @ Tc = 100 C B - Value Tol. +/- 5 % +/- 5 % +/- 3 % Typ. 4.7 0.39 3688 Units K K
(c)2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
FMS7G20US60
60 50
Common Emitter T C = 25
60
20V
15V 12V
[A]
[A]
50
C
40
C o ll e c t o r C u r r e n t , I
40
Common Emitter VGE = 15V T C = 25 T C = 125 ------
C o ll e c t o r C u r r e n t , I
C
30 V 20 10
GE
30
= 10V
20
10
0
0
0
2
4
6
8
1
10
C o ll e c t o r -
E m itt e r V o lt a g e , V
CE
[V]
C o ll e c t o r -
E m itt e r V o lt a g e , V
CE
[V]
Fig 1. Typical Output Characteristics
5
Fig 2. Typical Saturation Voltage Characteristics
C E ( s at)
[V]
4
Common Emitter VGE = 15V
10
3
Thermal Response, Zthjc [/W]
C o ll e c t o r - E m it t e r V o lt a g e , V
40 A
FRD
1
2 20 A I
C
IG BT
1 = 10 A
0.1
0
Sin gle P uls e (T h er m al re s p o n s e)
0.01 10
-5
-50
0
50
C
100
150
C ase T e m p erature, T
[oC ]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Transient Thermal Impedance
20
Common Emitter TC = 25
20
Common Emitter TC = 125
[V]
C E ( s at)
C o ll e c t o r - E m it t e r V o lt a g e , V
12 8
4 40A
C o ll e c t o r - E m it t e r V o lt a g e , V
12 8
4 40A I
C
0 I
= 10A
C
20A
0
C E ( s at)
16
[V]
16
= 10A
20A
0
4
8
12
GE
16
20
0
4
8
12
GE
16
20
G a t e - E m itt e r V o lt a g e , V
[V]
G a t e - E m itt e r V o lt a g e , V
[V]
Fig 5. Saturation Voltage vs. VGE
(c)2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FMS7G20US60 Rev. A
FMS7G20US60
3000 2700 2400 2100 Coes Cie s
Common Emitter VGE = 0 V, f = 1 MHz TC = 25 C
o
1000
Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 ------
Ton
1800 1500 1200 900 600 300 0 0.1
Cres
S w it c h i n g T i m e [ n s ]
C a p a c it a n c e [ p F ]
Tr
100
1
10
CE
10
20
30
40
50
60
70
80
90
100
C o ll e c t o r - E m it t e r V o lt a g e , V
[V]
G ate R e sista n c e, R g [
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
S w it c h i n g T i m e [ n s ]
Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 ------
Common Emitter VCC = 300V, VGE = 15V IC = 20A TC = 25 TC = 125 ------
S w it c h i n g L o s s [ u J ]
1000 E o ff Eon E o ff
T o ff
Tf 100
100 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100
G ate R e sista n c e, R g [
]
G ate R e sista n c e, R g [
]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125 -----Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125 ------
1000
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
Ton
T o ff
Tr 100
100
Tf
10
15
20
25
C
30
35
40
10 10 15 20 25 30
C
35
40
C o ll e c t o r C u r r e n t , I
[A]
C o ll e c t o r C u r r e n t , I
[A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FMS7G20US60 Rev. A
FMS7G20US60
10000
Common Emitter VGE = 15V, RG = 10 TC = 25 TC = 125 ------
15
Common Emitter RL = 15
V
CC
= 100 V 200 V
[V]
12
S w it c h i n g L o s s [ u J ]
E o ff 1000 E o ff Eon
6
3
0
100 10 15 20 25
C
30
35
40 0
G a t e - E m itt e r V o lt a g e , V
GE
9
TC = 25 C
o
300 V
10
20
30
g
40
50
60
C o ll e c t o r C u r r e n t , I
[A]
G ate C harg e, Q
[nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
80
100 IC MAX. (Pulsed) 50us
Collector Current, IC [A]
10
100us 1 ms DC Operation
Collector Current, I C [A]
IC MAX. (Continuous)
10
1
1 Single Nonrepetitive Pulse TJ 125 V GE = 15V RG = 10 0 100 200 300 400 500 600 700
0.1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
0.01
0.1
Collector-Emitter Voltage, V C E [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. RBSOA Characteristics
40 35 30 25 20 15 10 5 0 0
20
Peak Reverse Recovery Current, I rr [A] Reverse Recovery Time, T rr [x10ns]
Common Cathode V GE = 0V T C = 25 T C = 125
10
Trr
Forward Current, I
F
[A]
Irr 1
Common Cathode di/dt = 40A/us T C = 25 T C = 100 -------0.1 3 6 9 12 15 18 21
1
2
3
4
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 17. Forward Characteristics
(c)2003 Fairchild Semiconductor Corporation
Fig 18. Reverse Recovery Characteristics
FMS7G20US60 Rev. A
FMS7G20US60
1000
100
[A]
100
T
C
= 125
o
C 25
o
In s t a n t a n e o u s F o r w a r d C u rr e n t, I
F
[uA]
10 1 1 0. 0.0 1 1E-3 0 400 800
R R
T
C
= 125
o
C
10
C
R e v e r s e C u rr e n t, I
25
o
C
1
0.1 0.4 0.6 0.8 1.0
F
1200
1600
1.2
1.4
R e v e r s e V o lt a g e , V
[V]
I n s t a n t a n e o u s V o lt a g e , V
[V]
Fig 19. Rectifier( Converter ) Characteristics
Fig 20. Rectifier( Converter ) Characteristics
16
3800 3750 3700
12 8
3650
]
C o n sta nt B 25/X
0 25 50 75
o
R e sista n c e, R [ K
3600 3550 3500 3450 3400 3350 3300
4
0
100
125
-25
0
25
50
o
75
100
Te m p erature, T [ C ]
T e m p erature [ C ]
Fig 21. NTC Characteristics
Fig 22. NTC Characteristics
(c)2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
FMS7G20US60
Package Dimension
25PM-AA
-. Pin Coordinate
Pin #No Coordinate x 0.0 -3.0 -6.0 -13.0 -18.0 -25.0 -29.0 -32.0 -35.0 -38.0 -46.5 -49.5 -49.5 -49.5 -49.5 -32.0 -29.0 -23.0 -20.0 -14.0 -11.0 3.5 3.5 3.5 3.5 y 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 11.5 20.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 28.0 20.0 11.5 5.5
Name Plate
1 2 3
82.2 0.20 4- O6.0 4- O2.0
0.10 Dp +0.20 71.0 -0.10
4 5 6
6.0
57.0 0.20 2- O4.3 -0.00 Mounting-Hole
+0.20
7 8 9 10 11
15
22
37.9 0.20
17.5 0.20
30.8 -0.10
+0.20
12
1
12
14.00.15
13 14 15 16 17 18 19 20 21
4.30.20
5.1 -0.10
+0.20
O1.00.05
+0.20 16.7 -0.10
4.30.20
23.00.15
21.0 0.20
11.2 -0.10
+0.20
16.3 -0.10
3.2 -0.10
+0.20
+0.20
22 23 24 25
* datum pin : #1 * Pin Tilt : 0.15
Dimensions in Millimeters
(c)2003 Fairchild Semiconductor Corporation FMS7G20US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2003 Fairchild Semiconductor Corporation
Rev. I2

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